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. lang baseir gendriss 2012 download 720p. 3d Catwalk Poison MKV 6234G · avanti brush studio 5 3d pdf · e.200 cars racing.The present invention relates to semiconductor processing, and more particularly to semiconductor processing with triple metal layers. In semiconductor processing, as device feature size continues to shrink, the number of metal layers in a multi-layer metallization scheme increases, as does the complexity of inter-metal dielectric layers. For example, as CMOS processes migrate to very-high-k (k being the dielectric constant of the material) dielectric materials, five or more metal layers are needed for the core and I/O of semiconductor devices. Further, semiconductor devices are more difficult to manufacture as the number of layers rises because the surface topography of the wafer is harder to control, and uniformity of thickness across the wafer is harder to achieve. Processes for producing metal layers typically fall into one of two categories: physical vapor deposition (PVD), such as sputtering, and chemical vapor deposition (CVD). The advantages of sputtering over CVD are that deposition is more uniform, and that the process is more readily scaled to large substrates. However, sputtered films are rough, and in advanced CMOS processes, such as those using dielectric materials with a high-k, the roughness of sputtered films leads to high leakage currents. It would thus be beneficial to have a method of manufacturing multilayer devices where the surface roughness of the sputtered metal film is reduced. The present invention provides a method of forming a metal-insulator-metal structure comprising the steps of depositing a first metal layer on a substrate, and depositing a first insulating layer on the first metal layer. The first insulating layer and first metal layer are then patterned to form a first metal opening. The first metal layer and first insulating layer are then etched to form a second metal layer in the first metal opening. A second insulating layer is deposited in the first metal opening in which the second metal layer is located, such that the second insulating layer is exposed to the second metal layer. The second insulating layer is then patterned and etched to form a third metal layer in a second metal opening which is located in the second insulating layer, the third metal layer being an ancillary metal layer. The ancillary metal 3e33713323

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